Reception of memorator-diode combination for memorization system

Author: Aleksandre Beriashvili
Keywords: memristor, hafnium, diode, volt-amper characteristics
Annotation:

In the following paper we discussed the technological processes of obtaining the active layer memristor of transient metal hafnium oxides and creating an integral circuit element-diode combination. The technological route of receiving a combination of memristor and diode was developed. In one process, memristors consisting of complete and incomplete oxides of hafnium,was made with their(oxides) magnetic dissipation in the area of oxygen and argon, at various partial pressures. To study the electrical and structural characteristics of individual oxide tapes, each oxide layer on silicon semiconductor and dielectric diapers was obtained in the same technological mode. A diode structure on the silicon with a high breakthrough voltage was obtained. A technological route was developed for the active layer research of the memristor for solving various main tasks such as optimizing the method of its reception and combining it with other technological processes of the integral circuit. All of this was carried out in silica plate with the voltage (I-V) characteristics of the diode and memristor and the hafnium oxide tapes