Creating Heterostructures with Molecular Beam Epitaxy Technology

The close relationship between fundamental science and modern technology has resulted in rapid growth in the fields of microelectronics, nanoelectronics, and optoelectronics. Tools made from semiconductor materials are used in various fields, including quantum and radio physics, medicine, environmental monitoring, space research, and more. In these tools, which are made from transistors, diodes, and integrated circuits, these elements are created using new and improved semiconductor materials. These semiconductor materials possess electro-physical parameters that are significantly superior to those of older semiconductors. One of the technologies used to create new semiconductor nano materials with a 2D electron gas is molecular beam epitaxy (MBE).This method, which was initially used for specific multilayer structure research, has evolved into a fundamental technology widely employed in micro and nanoelectronics. In my paper, I discuss the fabrication of a 2-dimensional electron gas (2DEG) in GaAs/AlGaAs nanostructures using the molecular beam epitaxy (MBE) method. During the experimentation, the growth of deposition on a substrate was studied, focusing on various technological parameters such as temperature, deposition speed, layer thickness, and others. After obtaining the heterostructure, our aim was to measure its electrical parameters using the van-der-Pauw method (Hall method for superthin layers) and noncontact, ultra-high frequency, magnetoresistive measurement method. These techniques allowed us to accurately analyze the electrical properties of the heterostructure and gather valuable data for our research. In the AlGaAs/GaAs heterostructure, we conducted measurements of the main charge carrier concentration, mobility, and resistivity at temperatures of 300K and 77K. These measurements provided insights into the electrical behavior of the heterostructure at different temperatures, allowing us to assess the performance and characteristics of the material. We have established a relationship between the parameters of molecular beam epitaxy technology and the electro-physical properties of semiconductor structures. This information has enabled us to grow the desired configuration and characteristics of the AlGaAs/GaAs heterostructure.